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PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features Applications
l Small chip carrier package l High reliability l Low price
l Laser diode monitors
s General ratings
Parameter Package Active area
G6742-003 Ceramic base 0.3 G6742-003 20 -40 to +85 * -55 to +125 *
G6742-01 1.0 G6742-01 10
Unit mm Unit V C C
s Absolute maximum ratings
Parameter Symbol Reverse voltage VR Max. Operating Topr temperature Storage temperature Tstg * No condensation
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Cut-off frequency Terminal capacitance Shunt resistance Detectivity Noise equivalent power Symbol p S ID fc Ct Rsh D NEP =1.3 m =1.55 m VR=5 V VR=5 V, RL=50 -3 dB f=1 MHz VR=5 V VR=10 mV =p =p Condition Min. 0.8 0.85 -
G6742-003 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.3 300 10 1000 5 x 1012 4 x 10-15
Max. 1.5 -
Min. 0.8 0.85 -
G6742-01 Typ. 0.9 to 1.7 1.55 0.9 0.95 1 35 90 100 5 x 1012 2 x 10-14
Max. 5 -
Unit m m A/W nA MHz pF M cm * Hz1/2/W W/Hz1/2
InGaAs PIN photodiode
s Spectral response
1 (Typ. Ta=25 C)
G6742 series
s Photo sensitivity temperature characteristic
2 (Typ. Ta=25 C)
s Dark current vs. reverse voltage
1 A (Typ. Ta=25 C)
TEMPERATURE COEFFICIENT (%/C)
PHOTO SENSITIVITY (A/W)
100 nA
1
DARK CURRENT
10 nA G6742-01 1 nA
0.5
0
100 pA G6742-003
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-1 0.8
1.0
1.2
1.4
1.6
1.8
10 pA 0.01
0.1
1
10
100
WAVELENGTH (m)
KIRDB0002EB
WAVELENGTH (m)
KIRDB0042EA
REVERSE VOLTAGE (V)
KIRDB0150EA
sTerminal capacitance vs. reverse voltage
(Typ. Ta=25 C, f=1 MHz) 10 nF
s Shunt resistance vs. ambient temperature
100 G (Typ. VR=10 mV)
TERMINAL CAPACITANCE
1 nF
10 G
SHUNT RESISTANCE
G6742-003 1 G
100 pF
G6742-01
10 pF G6742-003
100 M
G6742-01
1 pF
10 M
100 fF 0.01
0.1
1
10
100
1 M -40
-20
0
20
40
60
80
100
REVERSE VOLTAGE (V)
KIRDB0209EA
AMBIENT TEMPERATURE (C)
KIRDB0210EA
s Dimensional outlines (unit: mm, tolerance: 0.1) G6742-003
0.6 MAX. 0.15 1.7 0.15 0.2
G6742-01
0.6 MAX. 0.15
0.2 0.5
1.7
0.15
0.2
0.3
4.0
2.6
0.5
0.2
0.3
0.3
2.0
2.0
ANODE CATHODE GOLD PLATING PART
2.0
2.0
ANODE CATHODE GOLD PLATING PART
KIRDA0057EA
0.2
0.5
KIRDA0058EA
ACTIVE AREA 0.3
ACTIVE AREA 1
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4.0
Cat. No. KIRD1016E01 Mar. 2001 DN
2.6
0.5
0.3

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